To additional improve the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ∼3× after KOH roughening at room temperature.
We optimized the inductively coupled plasma SF6 etch parameters to develop a substrate-removing process with high reliability and exact epitaxial control, with out creating micromasking defects or degrading the health of the plasma etching system. The SiC etch rate by SF6 plasma was ∼forty sixμm hr–1 at a high RF bias (four hundred W), and ∼7μm hr–1 at a low RF bias (49 W) with very high etch selectivity between SiC and AlN.
The growing demand for versatile RFID tags, wi-fi communications purposes and wi-fi energy harvesting techniques that may be produced at a low-price is a key driver for this technology push. In this topical evaluate, we summarise recent progress and status of versatile RF diodes and rectifying circuits, with particular focus on supplies and system processing features. To this end, different families of materials (e.g. versatile silicon, metallic oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and answer processing) and system architectures (diodes and transistors) are compared. Although emphasis is positioned on performance, performance, …